First Storage ETF in US Market Includes Changxin Technology

The first pure storage ETF in the US market, the DRAM Memory ETF, has included Changxin Technology. This ETF was established on April 2, 2026, with a scale of $24.55 billion and a peak return rate of 190%, currently standing at 161.5%. Samsung, Micron, and SK Hynix together account for over 73% of the weight, while Changxin Technology has a weight of 2.52%. Since its listing on the STAR Market, Changxin Technology's market value has remained above 300 billion yuan, briefly surpassing 400 billion yuan, and will end its limit on price fluctuations next Monday, entering the regular trading phase.

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